to-220 parameter symbol value unit collector-base voltage v c b o 100 v collector-emitter voltage v c e o 100 v emitter-base voltage v e b o 5 v collector current i c 5.0 a base current i b 0.1 a total dissipation at p t o t 65 w max. operating junction temperature t j 150 o c storage temperature t s t g -55~150 o c tip122 / TIP127 description parameter symbol test conditions min. typ. max. unit collector cut-off current i c e o v c b =100v, i e =0 0.5 ma emitter cut-off current i e b o v e b =5v, i c =0 2.0 ma collector-emitter sustaining voltage v c e o i c =30ma, i b =0 100 v dc current gain h f e ( 1 ) v c e =3v, i c =0.5a 1000 h f e ( 2 ) v c e =3v, i c =3.0a 1000 collector-emitter saturation voltage v c e ( s a t ) i c =3.0a,i b =12ma 2 v i c =5.0a,i b =20ma 4 base-emitter saturation voltage v b e ( s a t ) v c e =3v,i c =3.0a 2.5 v complementary silicon power darlington transistors product specification the tip122 are silicon epitaxial-base npn power transistors in monolithic darlington configuration mounted in jedec to-220 plastic package. they are intented for use in power linear and switching applications.the complementary pnp types are TIP127 respectively. electrical characteristics absolute maximum ratings ( ta = 25 c) o ( ta = 25 c) o tiger electronic co.,ltd
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